| PART |
Description |
Maker |
| MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| L8711PR |
SILICON GATE ENHANCEMENT MODE
|
Polyfet RF Devices
|
| MTP5N05 MTP5N06 |
N-CHANNEL ENHANCEMENT MODE SILICON GATE
|
New Jersey Semi-Conductor P...
|
| NTP22N06 |
N?Channel Enhancement?Mode Silicon Gate
|
ON Semiconductor
|
| SK204 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| LP701 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| LP821 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| LP721 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| LX703 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| SP204 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
Polyfet RF Devices
|
